BPW97 vishay semiconductors 1 (6) rev. 2, 20-may-99 www.vishay.com document number 81533 silicon pin photodiode description BPW97 is an extra high speed pin photodiode in a hermetically sealed to18 package. unlike most similar devices, the cathode terminal is isolated from case and connected to a third terminal, giving the user all the means to improve shielding of his system. due to its high precision flat glass window and its accu- rate chip alignment, this device is recommended for ambitious applications in the optical data transmission domain. features extra fast response times at low operating volt- ages exact central chip alignment chip insulated shielded construction hermetically sealed to18 case flat optical window wide angle of half sensitivity j = 55 radiant sensitive area a=0.25mm 2 suitable for visible and near infrared radiation suitable for coupling with 50 m gradient index fi- ber 94 8478 applications wide band detector for demodulation of fast signals, e.g. of lasers and gaas emitters. detector for optical communication, e.g. for optical fiber transmission systems with only 5 v power supply. absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 285 mw junction temperature t j 125 c storage temperature range t stg 55...+125 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient r thja 350 k/w
BPW97 vishay semiconductors 2 (6) rev. 2, 20-may-99 www.vishay.com document number 81533 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 50 ma v f 0.9 1.2 v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 50 v, e = 0 i ro 1 5 na diode capacitance v r = 50 v, f = 1 mhz, e = 0 c d 1.7 pf dark resistance v r = 10m v, e = 0, f = 0 r d 5 g serial resistance v r = 50 v, f = 1 mhz r s 180 reverse light current e e = 1 mw/cm 2 , = 870 nm, v r = 50 v i ra 1.0 1.3 a e e = 1 mw/cm 2 , = 950 nm, v r = 50 v i ra 0.9 a temp. coefficient of i ra v r = 50 v, = 870 nm tk ira 0.2 %/k absolute spectral sensitivity v r = 5 v, = 870 nm s( ) 0.50 a/w y v r = 5 v, = 950 nm s( ) 0.35 a/w angle of half sensitivity j + 55 deg wavelength of peak sensitivity p 810 nm range of spectral bandwidth 0.5 560...960 nm quantum efficiency = 850 nm 80 % noise equivalent power v r = 50 v, = 870 nm nep 3.6x10 14 w/ / hz detectivity v r = 50 v, = 870 nm d * 1.4x10 12 cm / hz/ w rise time v r = 3.8 v, r l = 50 , = 780 nm t r 1.2 ns fall time v r = 3.8 v, r l = 50 , = 780 nm t f 1.2 ns rise time v r = 50 v, r l = 50 , = 820 nm t r 0.6 ns fall time v r = 50 v, r l = 50 , = 820 nm t f 0.6 ns cutoff frequency = 820 nm f c 1 ghz
BPW97 vishay semiconductors 3 (6) rev. 2, 20-may-99 www.vishay.com document number 81533 typical characteristics (t amb = 25 c unless otherwise specified) 40 60 80 120 94 8445 100 20 i reverse dark current ( na ) ro t amb ambient temperature ( 5 c ) 10 0 10 1 10 2 10 3 10 4 v r =50v figure 1. reverse dark current vs. ambient temperature 0.8 0.9 1.0 1.1 1.2 1.4 1.3 i relative reverse light current ra rel t amb ambient temperature ( 5 c ) 94 8446 20 40 60 80 100 v r =50v =870nm figure 2. relative reverse light current vs. ambient temperature 0.01 0.1 1 10 0.01 0.1 1 i reverse light current ( a ) ra e e irradiance ( mw / cm 2 ) 10 94 8447 v r =50v =950nm figure 3. reverse light current vs. irradiance 0.01 0.1 1 10 94 8448 i reverse light current ( a ) ra 0.1 1 10 v r reverse voltage ( v ) 100 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 =950nm figure 4. reverse light current vs. reverse voltage 0 2 4 6 8 0.1 1 10 c diode capacitance ( pf ) d v r reverse voltage ( v ) 100 94 8449 e=0 f=1mhz figure 5. diode capacitance vs. reverse voltage nep noise equivalent power ( w / hz ) r l load resistance ( ) 94 8450 10 2 10 3 10 4 10 5 10 6 10 7 10 8 10 14 10 13 10 12 10 11 10 10 f=1000mhz 500mhz 100mhz 10mhz 1mhz f;b=1 =870nm figure 6. noise equivalent power vs. load resistance
BPW97 vishay semiconductors 4 (6) rev. 2, 20-may-99 www.vishay.com document number 81533 1 10 100 3 2 1 0 1 3 s ( , ) relative sensitivity ( db ) rel f frequency ( mhz ) 1000 94 8451 2 7 v r =50v 15v figure 7. relative sensitivity vs. frequency 350 550 750 950 0 0.2 0.4 0.6 0.8 1.0 1150 94 8452 s ( ) relative spectral sensitivity rel wavelength ( nm ) figure 8. relative spectral sensitivity vs. wavelength 0.4 0.2 0 0.2 0.4 s relative sensitivity rel 0.6 94 8453 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 figure 9. relative radiant sensitivity vs. angular displacement
BPW97 vishay semiconductors 5 (6) rev. 2, 20-may-99 www.vishay.com document number 81533 dimensions in mm 96 12182
BPW97 vishay semiconductors 6 (6) rev. 2, 20-may-99 www.vishay.com document number 81533 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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